LINEARITY AND ANALOG PERFORMANCE ANALYSIS OF DOUBLE GATE TUNNEL FET: EFFECT OF TEMPERATURE AND GATE STACK

The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET)is investigated and the impact of elevated temperature on the device performance degradation has beenstudied. The impact on the device performance due to the rise in temperature and a gate stack (GS)architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DGTFETis made. The parameters governing the analog performance and linearity have been studied, andhigh frequency simulations are carried out to determine the cut-off frequency of the device and itstemperature dependence.