%0 Journal Article
%T LINEARITY AND ANALOG PERFORMANCE ANALYSIS OF DOUBLE GATE TUNNEL FET: EFFECT OF TEMPERATURE AND GATE STACK
%A RAKHI NARANG
%A MANOJ SAXENA
%A R. S. GUPTA
%A MRIDULA GUPTA
%J International Journal of VLSI Design & Communication Systems
%D 2011
%I Academy & Industry Research Collaboration Center (AIRCC)
%X The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET)is investigated and the impact of elevated temperature on the device performance degradation has beenstudied. The impact on the device performance due to the rise in temperature and a gate stack (GS)architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DGTFETis made. The parameters governing the analog performance and linearity have been studied, andhigh frequency simulations are carried out to determine the cut-off frequency of the device and itstemperature dependence.
%K Analog
%K DG-TFET
%K Gate Stack
%K Linearity
%U http://airccse.org/journal/vlsi/papers/2311vlsics16.pdf