An experimental circuit design method of charge sensitive preamplifier for signal readout of silicon detector is introduced. Firstly, the circuit principle simulation and circuit parameter optimization are realized based on Multisim software. Secondly, the circuit is designed with junction field effect transistors (JFETs) as input stage, constant current source as load and integrated operational amplifier as amplifier stage. Finally, the circuit is applied to match silicon semiconductor detector to measure the energy spectrum of low energy γ-rays. The circuit has the advantages of large open-loop gain, high stability of charge voltage conversion gain, simple circuit structure and good energy resolution.
Cite this paper
Wang, N. , Hu, C. , Yue, T. , Li, C. and Zeng, G. (2022). Design of a Preamplifier for Silicon Detector Redout Experiment. Open Access Library Journal, 9, e9430. doi: http://dx.doi.org/10.4236/oalib.1109430.
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