Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

we have investigated the pentacene based organic thin film transistors (otfts) with high-k dielectric nd2o3. use of high dielectric constant (high-k) gate insulator nd2o3 reduces the threshold voltage and sub threshold swing of the otfts. the calculated threshold voltage -2.2v and sub-threshold swing 1v/decade, current on-off ratio is 1.7 × 104 and mobility is 0.13cm2/v.s. pentacene film is deposited on nd2o3 surface using two step deposition method. deposited pentacene film is found poly crystalline in nature.