%0 Journal Article
%T Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
%A Sarma
%A R.
%A Saikia
%A D.
%A Saikia
%A Puja
%A Saikia
%A P.K.
%A Baishya
%A B.
%J Brazilian Journal of Physics
%D 2010
%I Scientific Electronic Library Online
%R 10.1590/S0103-97332010000300019
%X we have investigated the pentacene based organic thin film transistors (otfts) with high-k dielectric nd2o3. use of high dielectric constant (high-k) gate insulator nd2o3 reduces the threshold voltage and sub threshold swing of the otfts. the calculated threshold voltage -2.2v and sub-threshold swing 1v/decade, current on-off ratio is 1.7 กม 104 and mobility is 0.13cm2/v.s. pentacene film is deposited on nd2o3 surface using two step deposition method. deposited pentacene film is found poly crystalline in nature.
%K pentacene
%K organic thin film transistors
%K low threshold voltage
%K rare earth oxide nd2o3
%K two step deposition.
%U http://www.scielo.br/scielo.php?script=sci_abstract&pid=S0103-97332010000300019&lng=en&nrm=iso&tlng=en