Determination of the Series Resistance of a Series Vertical-Junction Silicon (N+/P/P+) Solar Cell under Polychromatic Illumination and Magnetic Field: Effect of Optimum Thickness
By solving the magneto-transport equation for excess minority charge carriers in the base of the series vertical-junction silicon cell, the phenomenological parameters of the cell can be determined from the boundary conditions. Photocurrent density and photovoltage are determined for each value of applied magnetic field and corresponding optimum thickness, to establish the current-voltage characteristic (Jph(Sf, Sb, z, B, Hop)-Vph(Sf, Sb, z, B, Hop) of the silicon cell under polychromatic illumination. This study will make it possible to reduce the material used (by reducing the optimum thickness), which will help to lower prices. It will also enable us to reduce betting effects (lower series resistance), thereby boosting solar cell efficiency.
References
[1]
Dhariwal, S.R. and Vasu, N.K. (1981) A Generalised Approach to Lifetime Measurement in PN Junction Solar Cells. Solid-State Electronics, 24, 915-927. https://doi.org/10.1016/0038-1101(81)90112-x
[2]
Diallo, H.L., Seïdou Maiga, A., Wereme, A. and Sissoko, G. (2008) New Approach of Both Junction and Back Surface Recombination Velocities in a 3D Modelling Study of a Polycrystalline Silicon Solar Cell. The European Physical Journal Applied Physics, 42, 203-211. https://doi.org/10.1051/epjap:2008085
[3]
Betser, Y., Ritter, D., Bahir, G., Cohen, S. and Sperling, J. (1995) Measurement of the Minority Carrier Mobility in the Base of Heterojunction Bipolar Transistors Using a Magnetotransport Method. Applied Physics Letters, 67, 1883-1884. https://doi.org/10.1063/1.114364
[4]
Stokes, E.D. and Chu, T.L. (1977) Diffusion Lengths in Solar Cells from Short-Circuit Current Measurements. Applied Physics Letters, 30, 425-426. https://doi.org/10.1063/1.89433
[5]
Sissoko, G., Nanéma, E., Corréa, A., Biteye, P.M., Adj, M. and N’Diaye, A.L. (1998) Silicon Solar Cell Recombination Parameters Determination Using the Illuminated I-V Characteristic. World Renewable Energy Congress, Florence, 20-25 September 1998, 1847-1851.
[6]
Vardayan, R.R., Kerst, U., Wawer, P., Nell, M.N. and Wagemann, H.G (1998). Method of Measurement of All Recombination Parameters in the Base Region of Solar Cells. Proceedings of 2nd Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, 191-193.
[7]
Jung, T.-W., Lindholm, F.A. and Neugroschel, A. (1984) Unifying View of Transient Responses for Determining Lifetime and Surface Recombination Velocity in Silicon Diodes and Back-Surface-Field Solar Cells, with Application to Experimental Short-Circuit-Current Decay. IEEE Transactions on Electron Devices, 31, 588-595. https://doi.org/10.1109/t-ed.1984.21573
[8]
Sissoko, G., Museruka, C., Corréa, A., Gaye, I. and Ndiaye, A.L. (1996) Light Spectral Effect on Recombination Parameters of Silicon Solar Cell. World Renewable Energy Congress, Pergamon, Part III, 1487-1490.
[9]
Joardar, K., Dondero, R.C. and Schroder, D.K. (1989) A Critical Analysis of the Small-Signal Voltage-Decay Technique for Minority-Carrier Lifetime Measurement in Solar Cells. Solid-State Electronics, 32, 479-483. https://doi.org/10.1016/0038-1101(89)90030-0
[10]
Rose, B.H. and Weaver, H.T. (1983) Determination of Effective Surface Recombination Velocity and Minority-Carrier Lifetime in High-Efficiency Si Solar Cells. Journal of Applied Physics, 54, 238-247. https://doi.org/10.1063/1.331693
[11]
Fossum, J.G. (1977) Physical Operation of Back-Surface-Field Silicon Solar Cells. IEEE Transactions on Electron Devices, 24, 322-325. https://doi.org/10.1109/t-ed.1977.18735
[12]
Bouzidi, K., Chegaar, M. and Bouhemadou, A. (2007) Solar Cells Parameters Evaluation Considering the Series and Shunt Resistance. Solar Energy Materials and Solar Cells, 91, 1647-1651. https://doi.org/10.1016/j.solmat.2007.05.019
[13]
Bashahu, M. and Habyarimana, A. (1995) Review and Test of Methods for Determination of the Solar Cell Series Resistance. Renewable Energy, 6, 129-138. https://doi.org/10.1016/0960-1481(94)e0021-v
[14]
El-Adawi, M.K. and Al-Nuaim, I.A. (2001) A Method to Determine the Solar Cell Series Resistance from a Single I-V. Characteristic Curve Considering Its Shunt Resistance—New Approach. Vacuum, 64, 33-36. https://doi.org/10.1016/s0042-207x(01)00370-0
[15]
Diallo, H.L., Dieng, B., Ly, I., Dione, M.M., Ndiaye, M., Lemrabott, O.H., Bako, Z.N., Wereme, A. and Sissoko, G (2012) Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, 2626-2631.
[16]
Kumar, R.A., Suresh, M.S. and Nagaraju, J. (2001) Measurement of AC Parameters of Gallium Arsenide (GaAs/Ge) Solar Cell by Impedance Spectroscopy. IEEE Transactions on Electron Devices, 48, 2177-2179. https://doi.org/10.1109/16.944213
[17]
Thongpron, J., Kirtikara, K. and Jivacate, C. (2006) A Method for the Determination of Dynamic Resistance of Photovoltaic Modules under Illumination. Solar Energy Materials and Solar Cells, 90, 3078-3084. https://doi.org/10.1016/j.solmat.2006.06.029
[18]
Gover, A. and Stella, P. (1974) Vertical Multijunction Solar-Cell One-Dimensional Analysis. IEEE Transactions on Electron Devices, 21, 351-356. https://doi.org/10.1109/t-ed.1974.17927
[19]
Wise, J.F. (1970) Vertical Junction Hardened Solar Cell. US Patent 3, 690-953.
[20]
Terheiden, B., Hahn, G., Fath, P. and Bucher, E. (2000) The Lamella Silicon Solar Cell. 16th European Photovoltaic Solar Energy Conference, Glasgow, 1-5 May 2000, 1377-1380.
[21]
Ndiaye, A.M., Gueye, S., Mbaye Fall, M.F., Diop, G., Ba, A.M., Ba, M.L., et al. (2020) Diffusion Coefficient at Resonance Frequency as Applied to N+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination. Journal of Electromagnetic Analysis and Applications, 12, 145-158. https://doi.org/10.4236/jemaa.2020.1210012
[22]
Faye, D., Gueye, S., Ndiaye, M., Ba, M.L., Diatta, I., Traore, Y., et al. (2020) Lamella Silicon Solar Cell under both Temperature and Magnetic Field: Width Optimum Determination. Journal of Electromagnetic Analysis and Applications, 12, 43-55. https://doi.org/10.4236/jemaa.2020.124005
[23]
Flohr, T. and Helbig, R. (1989) Determination of Minority-Carrier Lifetime and Surface Recombination Velocity by Optical-Beam-Induced-Current Measurements at Different Light Wavelengths. Journal of Applied Physics, 66, 3060-3065. https://doi.org/10.1063/1.344161
[24]
Diop, M.S., Ba, H.Y., Thiam, N., Diatta, I., Traore, Y., Ba, M.L., et al. (2019) Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect. World Journal of Condensed Matter Physics, 9, 102-111. https://doi.org/10.4236/wjcmp.2019.94008
[25]
Hu, C., Carney, J.K. and Frank, R.I. (1977) New Analysis of a High-Voltage Vertical Multijunction Solar Cell. Journal of Applied Physics, 48, 442-444. https://doi.org/10.1063/1.323355
[26]
Sarfaty, R., Cherkun, A., Pozner, R., Segev, G., Zeierman, E., Flitsanov, Y., Kribus, A. and Rosenwaks, Y. (2011). Vertical Junction Si Micro-Cells for Concentrating Photovoltaics. Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, 5-6 September 2011, 145-147.
[27]
Furlan, J. and Amon, S. (1985) Approximation of the Carrier Generation Rate in Illuminated Silicon. Solid-State Electronics, 28, 1241-1243. https://doi.org/10.1016/0038-1101(85)90048-6
[28]
Sissoko, G., Sivoththanam, S., Rodot, M. and Mialhe, P (1992) Constant Illumination-Induced Open Circuit Voltage Decay (CIOCVD) Method, as Applied to High Efficiency Si Solar Cells for Bulk and Back Surface Characterization. 11th European Photovoltaic Solar Energy Conference and Exhibition, Montreux, 12-16 October 1992, 352-354.
[29]
Diasse, O., Diao, A., Wade, M., Diouf, M.S., Diatta, I., Mane, R., et al. (2018) Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State. Journal of Modern Physics, 9, 189-201. https://doi.org/10.4236/jmp.2018.92012
[30]
Ly, I., Lemrabott, O.H., Dieng, B., Gaye, I., Gueye, S., Diouf, M.S., et al. (2023) Techniques de détermination des paramètres de recombinaison et le domaine de leur validité d’une photopile bifaciale au silicium polycristallin sous éclairement multi spectral constant en régime statique. Journal of Renewable Energies, 15, 187-206. https://doi.org/10.54966/jreen.v15i2.311
[31]
Diouf, M.S., Gohan, S., Thiam, A., Faye, K., Ngom, M.I., Gaye, D. and Sissoko, G. (2015) Determination of the Junction Surface Recombination Velocity Limiting the Open Circuit (SFOC) for a Bifacial. International Journal of Innovative Science, Engineering & Technology, 2, 931-938.
