%0 Journal Article
%T Determination of the Series Resistance of a Series Vertical-Junction Silicon (N+/P/P+) Solar Cell under Polychromatic Illumination and Magnetic Field: Effect of Optimum Thickness
%A Dibor Faye
%A Babou Dione
%A Mountaga Boiro
%A Pape Diop
%J Journal of Modern Physics
%P 1543-1554
%@ 2153-120X
%D 2024
%I Scientific Research Publishing
%R 10.4236/jmp.2024.1510064
%X By solving the magneto-transport equation for excess minority charge carriers in the base of the series vertical-junction silicon cell, the phenomenological parameters of the cell can be determined from the boundary conditions. Photocurrent density and photovoltage are determined for each value of applied magnetic field and corresponding optimum thickness, to establish the current-voltage characteristic (<i>J</i><i><sub>ph</sub></i>(<i>Sf</i>, <i>Sb</i>, <i>z</i>, <i>B</i>, <i>Hop</i>)-<i>V</i><i><sub>ph</sub></i>(<i>Sf</i>, <i>Sb</i>, <i>z</i>, <i>B</i>, <i>Hop</i>) of the silicon cell under polychromatic illumination. This study will make it possible to reduce the material used (by reducing the optimum thickness), which will help to lower prices. It will also enable us to reduce betting effects (lower series resistance), thereby boosting solar cell efficiency.
%K Series Vertical Junction Silicon Cell
%K Static Regime
%K Magnetic Field
%K Optimum Thickness
%K Series Resistance
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=136256