High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications

High Resolution Image Download MS PowerPoint Slide The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2–3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 × 1015 cm–3, a rectification ratio of 3 × 108, and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy harvesting