%0 Journal Article
%T High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications
%J -
%D 2019
%R https://doi.org/10.1021/acsaelm.8b00053
%X High Resolution Image Download MS PowerPoint Slide The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2¨C3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 ¡Á 1015 cm¨C3, a rectification ratio of 3 ¡Á 108, and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy harvesting
%U https://pubs.acs.org/doi/10.1021/acsaelm.8b00053