Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

a Cross-sectional HAADF-STEM images of sample S1 showing GaAs/GaAsBi/GaAs interfaces. b Cross-sectional HAADF-STEM image of sample S2, in the GaAsBi layer bright spots distributed along the GaAsBi layer related to Bi-rich areas are observed. Detail using temperature colour scale of an area after applying a low-pass filter is included as an inset in the same image for a better visualisation. c Thickness gradient-corrected intensity profiles taken along [001] direction from the regions marked with green rectangles in the HAADF-STEM images, blue line for sample S1 and black line for sample S2, showing a slightly different behaviour at the interface