%0 Journal Article
%T Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM
%A C. H. Tan
%A D. L. Sales
%A M. Herrera
%A N. Balad¨¦s
%A R. D. Richards
%A S. I. Molina
%A Y. Liu
%J Archive of "Nanoscale Research Letters".
%D 2018
%R 10.1186/s11671-018-2530-5
%X a Cross-sectional HAADF-STEM images of sample S1 showing GaAs/GaAsBi/GaAs interfaces. b Cross-sectional HAADF-STEM image of sample S2, in the GaAsBi layer bright spots distributed along the GaAsBi layer related to Bi-rich areas are observed. Detail using temperature colour scale of an area after applying a low-pass filter is included as an inset in the same image for a better visualisation. c Thickness gradient-corrected intensity profiles taken along [001] direction from the regions marked with green rectangles in the HAADF-STEM images, blue line for sample S1 and black line for sample S2, showing a slightly different behaviour at the interface
%K GaAsBi
%K Ac-HAADF-STEM
%K Bi-clusters
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5918147/