Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Schematic architectural structures for the studied LEDs. The sketched energy band diagrams for the two p-EBLs are also provided: LED A has the p-Al0.60Ga0.40N-based EBL and LED B has the p-Al0.45Ga0.55N/Al0.60Ga0.40N superlattice EBL. The p-Al0.45Ga0.55N/Al0.60Ga0.40N superlattice EBL is specifically designed such that it initiates the thin p-Al0.45Ga0.55N layer so that the interface for the p-Al0.45Ga0.55N/Al0.56Ga0.44N last quantum barrier possesses negative polarization interface charges. E means energy level