%0 Journal Article
%T Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency
%A Chunshuang Chu
%A Hao-Chung Kuo
%A Kangkai Tian
%A Mengqian Fang
%A Sung-Wen Huang Chen
%A Wengang Bi
%A Yonghui Zhang
%A Zi-Hui Zhang
%J Archive of "Nanoscale Research Letters".
%D 2018
%R 10.1186/s11671-018-2539-9
%X Schematic architectural structures for the studied LEDs. The sketched energy band diagrams for the two p-EBLs are also provided: LED A has the p-Al0.60Ga0.40N-based EBL and LED B has the p-Al0.45Ga0.55N/Al0.60Ga0.40N superlattice EBL. The p-Al0.45Ga0.55N/Al0.60Ga0.40N superlattice EBL is specifically designed such that it initiates the thin p-Al0.45Ga0.55N layer so that the interface for the p-Al0.45Ga0.55N/Al0.56Ga0.44N last quantum barrier possesses negative polarization interface charges. E means energy level
%K DUV LED
%K Superlattice p-EBL
%K Hole injection
%K Electron leakage
%K Efficiency-droop-free
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5915986/