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- 2018
Effects of Etching Variations on Ge/Si Channel Formation and Device PerformanceDOI: 10.1186/s11671-018-2631-1 Keywords: Ge gate-all-around, High-defect, Dry etching, Numerical simulation Abstract: Physical model for numerical simulation of plasma reactor. a The sketch of the reactor chamber with prescribed boundary conditions. b Mesh system for numerical simulation
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