%0 Journal Article
%T Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
%A Chun-Lin Chu
%A Jiann-Lin Chen
%A Yiin-Kuen Fuh
%J Archive of "Nanoscale Research Letters".
%D 2018
%R 10.1186/s11671-018-2631-1
%X Physical model for numerical simulation of plasma reactor. a The sketch of the reactor chamber with prescribed boundary conditions. b Mesh system for numerical simulation
%K Ge gate-all-around
%K High-defect
%K Dry etching
%K Numerical simulation
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6068056/