Effect of Bilayer CeO2？x/ZnO and ZnO/CeO2？x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

DOI: 10.1186/s11671-018-2738-4

Keywords: Heterostructure, Resistive switching, Effect of polarity, Cerium oxide, Schottky emission, Conduction mechanism

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Abstract:

Schematic configuration of the bilayer a Ti/CeO2/ZnO/Pt and b Ti/ZnO/CeO2/Pt device

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