%0 Journal Article
%T Effect of Bilayer CeO2£¿x/ZnO and ZnO/CeO2£¿x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory
%A Anwar Manzoor Rana
%A Ijaz Talib
%A Jinju Lee
%A Muhammad Ismail
%A Shazia Jabeen
%A Sungjun Kim
%A Tahira Akbar
%J Archive of "Nanoscale Research Letters".
%D 2018
%R 10.1186/s11671-018-2738-4
%X Schematic configuration of the bilayer a Ti/CeO2/ZnO/Pt and b Ti/ZnO/CeO2/Pt device
%K Heterostructure
%K Resistive switching
%K Effect of polarity
%K Cerium oxide
%K Schottky emission
%K Conduction mechanism
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6181829/