Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

Cross-sectional scanning transmission electron microscopy (STEM) images with a 0.7-, b 1.5-, and c 7.4-nm-thick AlN. d, e Atomic percent vs. depth profiles obtained from energy dispersive X-ray spectroscopy (EDS) line scans for the samples with 0- and 7.4-nm-thick AlN, respectivel