%0 Journal Article
%T Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
%A Byung Joon Choi
%A Hee Ju Yoon
%A Hogyoung Kim
%J Archive of "Nanoscale Research Letters".
%D 2018
%R 10.1186/s11671-018-2645-8
%X Cross-sectional scanning transmission electron microscopy (STEM) images with a 0.7-, b 1.5-, and c 7.4-nm-thick AlN. d, e Atomic percent vs. depth profiles obtained from energy dispersive X-ray spectroscopy (EDS) line scans for the samples with 0- and 7.4-nm-thick AlN, respectivel
%K Atomic layer deposited AlN
%K Interface state density
%K Reverse leakage current
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6086779/