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二维MoS2/MoO2混合层结构的制备与表征
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Abstract:
近年来，半导体性的二维过渡金属硫族化合物(2D-TMDCs)由于其在半导体工业上的潜在应用而备受青睐。本文利用化学气相沉积法(CVD)，以MoO3粉末和S粉为前驱体，制备出了六边形和四边形的MoS2/MoO2混合层结构。我们首先利用光学显微镜(OM)和扫描电镜(SEM)观测了样品，然后通过X射线光电子谱(XPS)和能量色散谱(EDS)测试对样品的成分进行了初步判定，最后通过Raman光谱确定了我们制备的样品就是MoS2/MoO2混合层结构。同时，我们通过对比实验，对混合层结构的生长机理进行了探究。
In recent years, semiconducting two-dimensional transition metal dichalcogenides have been concerned for their potential applications in the semiconductor industry. In this paper, the hexagonal and rhomboic MoS2/MoO2 mixed structures were prepared by chemical vapor deposition method using MoO3 powder and S powder as precursors. First, the morphology of samples was observed by optical microscopy and SEM, and then the composition of samples was determined by XPS and EDS. Finally, the MoS2/MoO2 mixed structures of samples we prepared was confirmed by the Raman spectra. At the same time, we tried to explore the growth mechanisms of the mixed structure by comparative experiments.
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