Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime , where q is the acoustic wavenumber and is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density , on (？is the electron drift velocity and is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, , wavenumber q, temperature T and the electron-phonon interactions parameter, . When , decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when , rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification.
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![\"\"](\"Edit_f307ae95-67e0-4d4e-a8c2-4efe4eac51cf.png\")
, where q is the acoustic wavenumber and ![\"\"](\"Edit_81c3d015-7679-44c9-a103-b5f71067098b.png\")
is the electron mean![\"\"](\"Edit_4be9ce89-53ee-4d63-aea7-77e0df519227.png\")
, on ![\"\"](\"Edit_7d294ef8-91ed-492a-bad9-32121d7ce4f8.png\")
(![\"\"](\"Edit_d4425a55-6919-4616-9531-2a9ca659b558.png\")
？is the electron drift velocity and ![\"\"](\"Edit_89fc4b5e-c2ea-4772-bdc8-2e434886004f.png\")
is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, ![\"\"](\"Edit_f047281d-91d1-4349-b742-dcba89dded48.png\")
, wavenumber q, temperature T and the electron![\"\"](\"Edit_7ec20228-e385-4443-b145-1f4c7263608d.png\")
. When ![\"\"](\"Edit_687c9d84-bee4-4222-8066-2e7037c302ef.png\")
, ![\"\"](\"Edit_0507462e-344e-4dd5-bdd9-36777c1d4c25.png\")
decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when ![\"\"](\"Edit_3e7221ec-c458-490a-b1e1-26007f839019.png\")
, ![\"\"](\"Edit_ba227d10-f794-4f11-af16-87cfb116ef4d.png\")
rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip
