%0 Journal Article %T Semiconductor Fluorinated Carbon Nanotube as a Low Voltage Current Amplifier Acoustic Device %A D. Sakyi-Arthur %A S. Y. Mensah %A K. W. Adu %A K. A. Dompreh %A R. Edziah %A N. Mensah %A C. Jebuni-Adanu %J World Journal of Condensed Matter Physics %P 12-25 %@ 2160-6927 %D 2020 %I Scientific Research Publishing %R 10.4236/wjcmp.2020.101002 %X Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime $\"\"$ , where q is the acoustic wavenumber and $\"\"$ is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density $\"\"$ , on $\"\"$ ( $\"\"$ is the electron drift velocity and $\"\"$ is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, $\"\"$ , wavenumber q, temperature T and the electron-phonon interactions parameter, $\"\"$ . When $\"\"$ , $\"\"$ decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when $\"\"$ , $\"\"$ rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification.