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- 2015
嵌入吸收式单刀八掷开关电路
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Abstract:
提出了一种嵌入吸收式单刀八掷开关电路结构。利用PIN二极管的通断特性,设计了1个在14～18 GHz频率范围内的吸收式单刀八掷(SP8T)开关电路,导通损耗小于3.9 dB,输出端回波损耗大于10 dB;隔离度大于60 dB,输入、输出端回波损耗大于12 dB。该电路将吸收电阻嵌入在基片下接地板内,相比传统结构的吸收式开关电路,具有在导通状态下损耗略小;在关断状态下输出端反射信号较小。该嵌入吸收式结构也可应用于吸收式的衰减电路及限幅电路中。
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