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OALib Journal期刊
ISSN: 2333-9721
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二氧化硅基质包埋硅纳米晶的微观结构和发光性能
Keywords: 无机非金属材料,硅纳米晶,电子显微学,生长机理,荧光光谱
Abstract:
？利用离子注入和后续高温退火的方法制备了包埋在二氧化硅(sio2)基质中的硅纳米晶,研究了不同离子注入浓度试样的微观结构和发光性能,以及硅纳米晶的生长机理和发光机制.结果表明:？较小的硅纳米晶(<5nm)其生长机理符合ostwald熟化机理,较大的纳米晶(>10nm)则是由多个小纳米晶粒通过孪晶组合或融合而成的;离子注入浓度为8？×1016cm-2的样品其发光强度是离子注入浓度为3×1017cm-2样品发光强度的5倍；硅纳米晶内部的微观结构缺陷(如孪晶和层错)对其荧光强度有很大的影响.
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