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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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gexsi1-x材料生长的改善
Keywords: 超高真空化学气相淀积,gesi,x射线双晶
Abstract:
？利用超高真空化学气相淀积(uhv/cvd)系统在650℃生长出表面光亮的gesi单晶.在1200l/min分子泵与前级机械泵间串接450l/min分子泵,改善了生长环境.串接分子泵后生长的样品的x射线双晶衍射分析表明,外延层衍射峰半宽仅为198arcsec,且出现了pendellosung干涉条纹,说明外延层结晶质量很好.
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