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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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金属钨纳米线阵列的制备
Keywords: 金属材料,金属钨,单晶,纳米线,阵列
Abstract:
？用气相方法在较低的温度(900℃)下在单晶硅基片表面制备出金属钨的单晶纳米线阵列,用扫描电子显微镜(sem)、透射电子显微镜(tem)和x--ray衍射(xrd)等手段对其进行了分析和表征.结果表明:在900℃制备的阵列单晶钨纳米线沿<111>方向生长,具有bcc结构,直径约为150nm,长度为10--30？μm.
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