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OALib Journal期刊
ISSN: 2333-9721
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fe/si薄膜中硅化物的形成和氧化
Keywords: 无机非金属材料,半导体材料,原子扩散
Abstract:
？用磁控溅射方法制备fe/si薄膜,采用卢瑟福背散射(rbs)技术研究了退火过程中的相变过程和氧化.结果表明:未退火的fe/si薄膜界面清晰,873k退火后,界面附近fe、si原子开始相互扩散,973k退火后富金属相fe1+xsi形成,而1073k退火后形成中间相fesi,当温度增加至1273k后所有硅化物完全转变为富硅相fesi$_{2}$,即随退火温度的升高,fe、si原子间扩散增强,从而形成不同化学计量比的fe--si化合物,且薄膜中易迁移原子种类由fe变为si.同时,质子束rbs和xrd测量结果显示,在未退火及低温退火的样品中,薄膜有氧化现象,随退火温度增加,由于高温下金属氧化物被还原并逐渐挥发,样品中氧的含量逐渐减少最后完全消失.
| [1] | 1d.leong,m.harry,k.j.reeson,k.p.homewood,asilicon/iron-disilicidelightemittingdiodeoperatingatawavelengthof1.5mm,nature,387,686(1997)
|
| [2] | 2c.a.dimitriadis,j.h.werner,growthmechanismandmorphologyofsemiconductingfesi_2films,appl.phys.,68,94(1990)
|
| [3] | 3v.e.borisenko,semi-conductingsilicides,(springerse-riesinmaterialsscience,springer-verlag,newyork,2000)
|
| [4] | 4k.yamaguchi,k.shimura,h.udono,m.sasase,h.yamamoto,s.shamoto,k.hojou,effectofther-malannealingonthephotoluminescenceofβ-fesi_2filmsonsisubstrate,thinsolidfilms,508,367(2006)
|
| [5] | 5n.e.christensen,electronicstructureofβ-fesi_2,phys.rev.b,42,7148(1990)
|
| [6] | 6c.n.mckinty,a.k.kewell,j.s.sharpe,m.a.lourenco,t.m.butler,r.valizadeh,j.s.colligon,k.j.reeson,k.p.homewood,theopticalpropertiesofβ-fesi_2fabri-catedbyionbeamassistedsputtering,nucl.instr.andmeth.inphys.res.b,161-163,922(2000)
|
| [7] | 7s.y.ji,j.f.wang,j.w.lim,m.isshiki,growthprocessofβ-fesi_2epitaxialfilmonsi(111)bymolecularbeamepi-taxy,appliedsurfacescience,253,444(2006)
|
| [8] | 8k.m.geib,j.e.mahan,r.g.long,m.nathan,g.bai,epi-taxialorientationandmorpologyofβ-fesi_2on(001)sil-icon,j.appl.phys.,70(3),1730(1991)
|
| [9] | 9d.r.miquita,r.paniago,w.n.rodrigues,m.v.b.moreira,h.d.pfannes,a.g.deoliveira,growthofβ-fesi_2layersonsi(111)bysolidphaseandreactivedepositionepitaxies,thinsolidfilms,493,30(2005)
|
| [10] | 10a.yamamoto,s.tanaka,d.matsubayashi,s.makiuchi,h.tatsuoka,t.matsuyama,m.tanaka,z.q.liu,h.kuwabara,morphologicalmodificationofβ-fesi_2onsi(111)byhightemperaturegrowthandpost-thermalannealing,thinsolidfilms,461,28(2004)
|
| [11] | 14k.okajima,ch.wen,m.ihara,i.sakata,k.yamada,op-ticalandelectricalpropertiesofβ-fesi_2/si,β-fesi_2/inpheterojunctionpreparedbyrf-sputteringdeposition,jpn.j.appl.phys.,38,781(1999)
|
| [12] | 15s.chu,t.hirohada,h.kan,roomtemperature1.58μmphotoluminescenceandelectricpropertiesofhighlyori-entedβ-fesi_2filmspreparedbymagnetron-sputteringde-position,jpn.j.appl.phys.,41,l299(2002)
|
| [13] | 16s.chu,t.hirohada,k.nakajima,h.kan,t.hiruma,room-temperature1.56μmelectroluminescenceofhighlyorientedβ-fesi_2/sisingleheterojunctionpreparedbymagnetron-sputteringdeposition,jpn.j.appl.phys.,41,l1200(2002)
|
| [14] | 17schu.,t.hirohada,m.kuwabara,h.kan,t.hiruma,time-resolved1.5μm-bandphotoluminescenceofhighlyorientedβ-fesi_2filmspreparedbymagnetron-sputteringdeposition,jpn.j.appl.phys.,43,l127(2004)
|
| [15] | 18y.gao,y.t.chong,c.f.chow,s.p.wong,k.p.homewood,q.li,post-annealingeffectonthemicrostructureandphotoluminescencepropertiesoftheionbeamsynthesizedfesi_2precipitatesinsi,nucl.instr.andmeth.inphys.res.b,259(2),871(2007)
|
| [16] | 19m.muroga,h.suzuki,h.udono,i.kikuma,a.zhuravlev,k.yamaguchi,h.yamamoto,t.terai,growthofβ-fesi_2thinfilmsonβ-fesi_2(110)substratesbymolecularbeamepitaxy,thinsolidfilms,2007,515(22),8197(2007)
|
| [17] | 24h.c.cheng,t.r.yew,l.j.chen,epltaxialgrowthoffesi_2infethinfilmsonsiwithathininterposingnilayer,appl.phys.lett.,47(2),128(1985)
|
| [18] | 25k.yamaguchi,a.heya,k.shimura,t.katsumata,h.yamamoto,k.hojou,effectoftargetcompositionsonthecrystallinityofβ-fesi_2preparedby,ionbeamsputterdepositionmethod,thinsolidfilms,461,17(2004)
|
| [19] | 28t.saito,h.yamamoto,m.sasase,t.nakanoya,k.yamagnchi,m.haraguchi,k.hojou,surfacechem-icalstatesandoxidationresistivityof'ecologicallyfriendly'semiconductor(β-fesi_2)thinfilms,thinsolidfilms,415,138(2002)
|
| [20] | 29e.rauhala,n.p.barradas,m.fazinic,s.mayer,e.szilágyi,m.thompson,statusofionbeamdataanalysisandsim-ulationsoftware,nucl.instr.andmeth.inphys.res.b,244,436(2006)
|
| [21] | 30s.senthilarasu,r.sathyamoorthy,s.lalitha,d.k.avasthi,structuralpropertiesofswiftheavyionbeamirradiatedfe/sibilayers,thinsolidfilms,490,177(2005)
|
| [22] | 31m.itakura,n.kishikawa,r.kawashita,n.kuwano,epi-taxialorientationandmorphologyofβ-fesi_2producedonaflat,andapatternedsi(001)substrates,thinsolidfilms,515(22),8169(2007)
|
| [23] | 32k.radermacher,s.mantl,ch.dieker,h.lüth,c.freiburg,growthkineticsofironsilicidesfabriatedbysolidphaseepitaxyorionbeamsynthesis,thinsolidfilms,215,76(1992)
|
| [24] | 33ch.kloc,e.arushanow,m.wendl,h.hohl,u.malang,e.bucher,growthmechanismandmorphologyofsemi-conductingfesi2films,journalofalloysandcompounds,219,93(1995)
|
| [25] | 11y.t.chong,q.li,c.f.chow,n.ke,w.y.cheung,s.p.wong,k.p.homewood,theeffectofionimplantationenergyanddosageonthemicrostructureoftheionbeamsynthesizedfesi_2insi,materialsscienceandengineeringb,124-125,444(2005)
|
| [26] | 12m.a.lourenco,t.m.butler,a.k.kewell,r.m.gwilliam,k.j.kirkby,k.p.homewood,electrical,electronicandop-ticalcharacterisationofionbeamsynthesisedβ-fesi_2lightemittingdevices,nucl.instr.andmeth.inphys.res.b,175-177,159(2001)
|
| [27] | 13k.kyllesbechlarsen,j.tavares,h.bender,r.a.donaton,a.lanwers,k.maex,growthofepitaxialβ-fesi_2on(100)siliconusingfe-ti-sidiffusioncouples,j.appl.phys.,78(1),599(1995)
|
| [28] | 20k.omae,i.t.bae,m.naito,m.ishimaru,y.hirotsu,j.a.valdez,k.e.sickafus,structuralevolutioninfeionimplantedsiuponthermalannealing,nucl.instr.andmeth.inphys.res.b,250,300(2006)
|
| [29] | 21zhangjinmin,xiequan,zengwuxian,liangyan,zhangyong,yuping,tianhua,theeffectsofan-nealingonatomicinterdiffusionandmicrostructuresinfe/sisystem,chinesejournalofsemiconductors,28(12),40(2007)(张晋敏，谢泉，曾武贤，梁艳，张勇，余平，田华，退火对fe/si结构原子间互扩散及显微结构的影响，28(12)，40(2007))
|
| [30] | 22c.h.yu,y.l.chueh,s.w.lee,s.l.chenga,l.j.chen,l.j.chou,l.w.cheng,solidphasereactionsbetweenfethinfilmsandsi-gelayersonsi,thinsolidfilms,461,81(2004)
|
| [31] | 23n.p.barradas,c.jeynes,k.p.homewood,b.j.sealy,m.milosavljevic,rbs/simulatedannealinganalysisofsili-cideformationinfe/sisystems,nucl.instr.andmeth.inphys.res.b,139,235(1998)
|
| [32] | 26n.p.barradas,c.jeynes,k.p.homewood,b.j.sealy,m.milosavljevic,rbs/simulatedannealinganalysisofsili-cideformationinfe/sisystems,nucl.instr.andmeth.inphys.res.b,139,235(1998)
|
| [33] | 27k.p.lieb,k.zhang,v.milinovic,p.k.sahoo,s.klaumunzer,onthestructureandmagnetismofni/siandfe/sibilayersirradiatedwith350-mevauions,nucl.instr.andmeth.inphys.res.b,245,121(2006)
|
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