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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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b3+,zn2+掺杂与sio2薄膜驻极体的改性
Keywords: 离子掺杂,二氧化硅,复合膜,驻极体
Abstract:
？用粉体制备和高温熔凝工艺在n型单晶硅基片上制备了非晶态sio2--zno--b2o3复合膜驻极体,实现对sio2薄膜驻极体的改性.恒栅压电晕充电、等温表面电位衰减及热刺激放电(thermallystimulateddischarged,tsd)实验表明,b3+、zn2+的掺杂对sio2薄膜驻极体的电荷动态特性有较大影响:tsd放电电流峰稳定于t=238℃处,峰位不随充电温度和充电电压变化;正、负tsd电流谱关于温度轴对称.用离子掺杂可以有效地改变sio2薄膜驻极体内的微观网络结构,影响其电荷贮存性能.
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