OALib Journal期刊
ISSN: 2333-9721
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快速热退火对多层ge量子点晶体质量的影响
Keywords: 无机非金属材料,快速热退火,ge量子点,双晶x射线衍射,拉曼光谱
Abstract:
?使用超高真空化学气相淀积(uhv/cvd)设备在si衬底上生长多层ge量子点,用双晶x射线衍射(dcxrd)、拉曼光谱(raman)等手段表征在不同条件下快速热退火的ge量子点材料的组分、应力等特性,研究了快速热退火对多层ge量子点晶体质量的影响。结果表明:随着退火温度的升高,量子点中ge的组分下降,量子点应变的弛豫程度加剧。在1000℃退火20s后,量子点材料已经完全弛豫。
References
[1] | 1huangchangjun,thestudyofself-assembledgequantumdotsinge/simultilayerstructure,ph.d.dissertation,instituteofsemiconductors,chineseacademyofsciences(2002)
|
[2] | (黄昌俊,ge/si材料系自组装ge量子点研究,博士学位论文,中国科学院半导体研究所(2002))
|
[3] | self-assembledquantumdots,appliedphysicsletters,75(10),1413(1999)
|
[4] | 6c.miesner,o.r¨othig,k.brunner,g.abstreiter,intravalencebandphotocurrentspectroscopyofself-assembledgedotsinsi,appliedphysicsletters,76(8),1027(2000)
|
[5] | 13j.wan,y.h.luo,z.m.jiang,j.wan,y.h.luo,z.m.jiang,g.jin,j.l.liu,k.l.wang,x.z.liao,j.zou,ge/siinterdiffusioninthegesidotsandwettinglayers,journalofappliedphysics,90(8),4290(2001)
|
[6] | 14m.a.renucci,j.b.renucci,m.cardona,in:proceedingofthesecondinternationalconferenceonlightscatteringinsolids,ramanscatteringinge–sialloys,editedbym.balkanski(paris,flammarion,1971)p.326
|
[7] | 15j.c.tsang,p.m.mooney,f.dacol,j.o.chu,measurementsofalloycompositionandstraininthingexsi1?xlayers,journalofappliedphysics,75(12),8098(1994)
|
[8] | 2d.j.eaglesham,m.cerullo,dislocation-freestranski-krastanowgrowthofgeonsi(100),physicalreviewletters,64(16),1943(1990)
|
[9] | 3s.tong,j.l.liu,j.wan,k.l.wang,normal-incidencegequantum-dotphotodetectorsat1.5μmbasedonsisubstrate,appliedphysicsletters,80(7),1189(2002)
|
[10] | 4j.l.liu,w.g.wu,a.balandin,g.l.jin,k.l.wang,intersubbandabsorptioninboron-dopedmultiplegequantumdots,appliedphysicsletters,74(2),185(1999)
|
[11] | 5a.i.yakimov,a.v.dvurechenskii,y.y.proskuryakov,a.i.nikiforov,o.p.pchelyakov,s.a.teys,a.k.gutakovskii,normal-incidenceinfraredphotoconductivityinsip-i-ndiodewithembeddedge
|
[12] | 7c.li,q.q.yang,y.h.cheng,h.j.wang,j.z.wang,j.z.yu,q.m.wang,astudyofsi1?xgex/siquantumwellintermixingbyphotocurrentspectroscopy,thinsolidfilms,359(2),236(2000)
|
[13] | 8shiwenhua,thestudyofge/sinano-islandsanddevice,ph.d.dissertation,instituteofsemiconductors,chineseacademyofsciences(2007)
|
[14] | (时文华,ge/si纳米岛材料与器件研究,博士学位论文,中国科学院半导体研究所(2007))
|
[15] | 9x.liu,d.huang,z.jiang,x.wang,interfacebroadeningandramanscatteringinsi1?xgex/sisuperlattices,physicalreviewb,53(8),4699(1996)
|
[16] | 10p.boucaud,l.wu,c.guedj,f.h.julien,i.sajnes,y.campidelli,l.garchery,photoluminescenceandintersubbandabsorptionspectroscopyofinterdiffusedsi/sigequantumwells,journalofappliedphysics,80(3),1414(1996)
|
[17] | 11j.y.yao,t.g..anderson,g.l.duniop,theinterfacialmorphologyofstrainedepitaxialinxga1?xas/gaas,journalofappliedphysics,69(4),2224(1991)
|
[18] | 12z.pan,y.t.wang,y.zhuang,y.w.lin,z.q.zhou,l.h.li,r.h.wu,q.m.wang,investigationofperiodicityfluctuationsinstrained(ganas)1(gaas)msuperlatticesbythekinematicalsimulationofx-raydiffraction,appliedphysicsletters,75(2),223(1999)
|
[19] | 16p.h.tan,k.brunner,d.bougeard,g.abstreiter,ramancharacterizationofstrainandcompositioninsmall-sizedself-assembledsi/gedots,physicalreviewb,68(12),125302(2003)
|
[20] | 17q.j.cai,h.zhou,f.lu,theeffectsofthermalannealinginself-assembledge/siquantumdots,appliedsurfacescience,253(10),4792(2007)
|
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