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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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工艺参数对aginsbte薄膜性能的影响
Keywords: 射频磁控溅射,ag8in14sb55te23相变薄膜
Abstract:
？采用射频磁控溅射工艺,在k9玻璃基片上用ag-in-sb-te合金靶制备了ag8in14sb55te23相变薄膜,将沉积态薄膜在300℃进行了热处理.测量了薄膜的光学性质和静态存储性能,研究了溅射气压和功率对薄膜光学性质和静态存储性能的影响.结果表明,适当的溅射气压和溅射功率可使ag8in14sb55te23相变薄膜具有较大的反射率对比度,从而提高其存储性能.
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