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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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轴向磁场对硅单晶czochralski生长过程的影响
Keywords: 材料科学基础学科,全局分析,有限元方法
Abstract:
？利用有限元方法对炉内的传递过程进行了全局数值模拟,假定熔体和气相中的流动都为准稳态轴对称层流,熔体为不可压缩流体,cz炉外壁温度维持恒定,模拟磁场强度范围为(0~0.3)t,研究了用czochralski(cz)法生长单晶硅轴向磁场对熔体流动和氧传输过程的影响.结果表明:轴向磁场可有效地抑制熔体内的流动,但增大加热器功率和结晶界面处晶体内的轴向温度梯度;对于常规cz炉,轴向磁场可增大结晶界面平均氧浓度,而对于具有气体导板的cz炉,则会减小结晶界面平均氧浓度.
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