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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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硅衬底碳化对异质外延sic薄膜结构的影响
Abstract:
？用lpmocvd方法在p-si(111)衬底上异质外延生长sic,用碳化方法生长出具有单晶结构的3c-sic薄膜,研究了开始碳化温度、丙烷流量和碳化时间对结晶质量的影响.结果表明,在较低的温度开始碳化不利于丙烷的分解,不能形成很好的过渡层;碳化时丙烷流量过大会造成碳污染,碳化时间过长使过渡层的结晶质量降低.最佳的碳化条件为:开始碳化温度1150℃,碳化时间和碳化时丙烷的流量分别为8min和2sccm.
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