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OALib Journal期刊
ISSN: 2333-9721
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用等离子体增强化学气相沉积制备微晶硅薄膜
Keywords: 材料合成与加工工艺,？微晶硅薄膜,ar稀释sih4,ecr--pecvd,微波功率
Abstract:
？以ar+sih4作为反应气体,用电子回旋共振等离子体化学气相沉积(ecr--pecvd)方法制备微晶硅薄膜,研究了微波功率对薄膜中h含量、薄膜的沉积速率、择优取向和结晶度的影响。结果表明,在300℃制备低温微晶硅薄膜,随着微波功率的增大,薄膜的沉积速率先增大后减小,微波功率为600w时达到最大;而结晶度和薄膜中的h含量则分别呈现单调增大和单调减少的趋势;使用不同的微波功率,薄膜的择优取向均为(111)方向。
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