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OALib Journal期刊
ISSN: 2333-9721
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ar/o2对磁控溅射法制备bi1.5mgnb1.5o7薄膜结构与性能的影响
DOI: 10.3969/j.issn.1671-7627.2014.03.001, PP. 1-6
Keywords: bi1.5mgnb1.5o7薄膜,磁控溅射,介电性能,ar/o2流速比,调谐率
Abstract:
采用射频磁控溅射法在不同ar/o2流速比下制备铌镁酸铋(bi1.5mgnb1.5o7,bmn)薄膜。通过x线衍射仪(xrd)、原子力显微镜(afm)和阻抗分析仪分别对薄膜的相结构、表面形貌和介电性能进行表征。结果表明:经过700℃o2气氛下退火处理,bmn薄膜形成立方焦绿石单相结构。当ar/o2流速比为2:1时溅射薄膜的表面粗糙度较小,漏电流较低,具有高的介电常数、低的介电损耗(1mhz的测试频率下介电常数和介电损耗分别为158和0.4%),并且在0.8mv/cm的外加电场下介电可调率和优质因子分别为16.4%和36。
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