Yi Tang, Jefferey B Fedison, T Paul Chow.High-voltage implantedemitter 4H-SiC BJTs[J].IEEE Electron Device Letters, 2002,23(1):16-18.
[2]
I Perez-Wurfl, R Krutsinger, et al.4H-SiC bipolar junction transistor with high current and power density[J].Solid-State Electronics, 2003,47(2):229-231.
[3]
Medici User''s Manual[Z].version 4.1,Avant! Corporation,TCAD Business Unit.
Martin Lades.Modeling and Simulation of Wide Bandgap Semiconductor Devices:4H/6H-SiC[DB/OL].2000.http://tumbl.biblio.tumuenchen.dellpubl/diss/ei/2000/lades.pdf, 2004-02-17.
[6]
1997 Atlas User Manual[Z].Santa Clara, CA:Silvaco International.
[7]
Ruff Martin, Mitlehner Heinz, Helbig Reinhard.SiC Devices:Physics and Numerical Simulation[J].IEEE Transactions on Electron Devices, 1994,41(6):1040-1053.
[8]
Y Luo, L Fursin, J H Zhao.Demonstration of 4H-SiC power bipolar junction transistors[J].IEE Electronics Letters, 2000, 36(17):1496-1497.
[9]
Sei-Hyung Ryu, Anant K Agarwal, et al.1800V NPN bipolar junction transistors in 4H-SiC[J].IEEE Electron Device Letters,2001,22(3):124-126.
[10]
O Kordinaand, J P Bergman.The minority lifetime of n-type 4H-SiC and 6H-SiC epitaxial layers[J].Appl.Phys.Lett, 1996,69(5):679-681.
[11]
Bakowski M, Gustafsson U, et al.Simulation of SiC high power devices[J].Phys star Sol(a), 1997,162(1):421-440.
