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电子学报  2013 

应用于变化条件下延时分析的反相器模型

DOI: 10.3969/j.issn.0372-2112.2013.07.032, PP. 1448-1452

Keywords: 工艺变化,反相器门延时模型,衬底耦合效应,多项式混沌

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Abstract:

本文提出了一个考虑衬底耦合效应的门延迟模型.该模型在考虑衬底耦合效应下转换CMOS反相器的延迟为等效电阻和电容(RC)网络延迟.考虑工艺参数扰动和衬底耦合效应对门延时的影响,建立基于工艺扰动的简单开关电容门延迟模型,结合随机配置法和多项式的混沌展开法分析门延时.利用数值计算方法对本模型和分析方法进行验证,结果表明与HSPICE精确模型仿真结果的相对误差小于2%,证明本模型和分析方法的有效性.

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