全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...
电子学报  2013 

基于全集成自提取结终端隔离BCD新工艺的场致发光高压驱动芯片

DOI: 10.3969/j.issn.0372-2112.2013.09.31, PP. 1858-1862

Keywords: BCD(双极-互补金属氧化物半导体-双重扩散金属氧化物半导体),场致发光,自提取结终端,高低侧全桥驱动

Full-Text   Cite this paper   Add to My Lib

Abstract:

本文提出可集成自提取结终端的0.35μm150V-BCD(双极-互补金属氧化物半导体-双重扩散金属氧化物半导体)全套新型高压工艺.利用此工艺研制出100V场致发光用高低侧驱动芯片,并提出了基于双极器件BC(双极集电极)结短路自提取结终端新工艺与新结构,既可满足场致发光高压驱动芯片应用,又能取代传统采用氧化扩散工艺的P-ISO(P型隔离结构)传统隔离结构,显著简化了工艺和提高了芯片的高集成度,确保片内集成的低电阻率VDNMOS/LDPMOS(N型垂直双扩散金属氧化物半导体场效应晶体管/P型横向扩散金属氧化物半导体场效应晶体管)高压驱动模块与低压逻辑控制模块在100V高压脉冲交替工作状况下无负电位、EMMI(微光显微镜)等寄生现象出现.

References

[1]  Sun J M,Jiang F,Guan L P,Xiong Z B,Yan G Z,Sin J K O.A new isolation technology for automotive power-integrated-circuit application[J].IEEE Transactions on Electron Devices,2009,56(9):2144-2149.
[2]  Kim J,Roh T M,Kim S G,Song D W,Koo J G,Cho K I,Ma D S.High-voltage power integrated circuit technology using SOI for driving plasma display panels[J].IEEE Transactions on Electron Devices,2001,28(1):1256-1259.
[3]  Sun W F,Shi L X,Sun Z L,Yi Y B,Li H S,Lu S L.High voltage power IC technology with nVDMOS RESURF pLDMOS,and novel level-shift circuit for PDP scan-driver IC[J].IEEE Transactions on Electron Devices,2006,53(4):891-896.
[4]  李晓明,庄奕琪.用于等离子驱动芯片的低成本VDMOS及其兼容BCD高压工艺[J].半导体学报,2007,28(11):1679-1684. Li X M,Zhuang Y Q.Cost-Effective VDMOS and compatible process for PDP scan-driver IC[J].Chinese Journal of Semiconductor,2007,28(11):1679-1684.(in Chinese)
[5]  Theolier L,Mahfoz-kotb K I,Morancho F,Assie-Souleille S,Mauran N.A new junction termination using a deep trench filled with BenzoCycloButene[J].IEEE Electron Device Letters,2009,30(6):687-689.
[6]  黄伟,许居衍,等.一种利用夹层Ta难熔金属提高NiSi薄膜热稳定性的新方法[J].电子学报,2011,39(11):2502-2506. Huang W,Xu J Y,et al.A thin tantalum interlayer on the thermal stability and electrical of NiSi film[J].Acta Electronica Sinica,2011,39(11):2502-2506.(in Chinese)
[7]  Sun W F,Yi Y B,Li H S,Shi L X.A novel latch-up protection for bulk-silicon scan driver ICs of shadow-mask plasma-display panel[J].IEEE Electron Device Letters,2007,28(12):1135-1137.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133