Sun J M,Jiang F,Guan L P,Xiong Z B,Yan G Z,Sin J K O.A new isolation technology for automotive power-integrated-circuit application[J].IEEE Transactions on Electron Devices,2009,56(9):2144-2149.
[2]
Kim J,Roh T M,Kim S G,Song D W,Koo J G,Cho K I,Ma D S.High-voltage power integrated circuit technology using SOI for driving plasma display panels[J].IEEE Transactions on Electron Devices,2001,28(1):1256-1259.
[3]
Sun W F,Shi L X,Sun Z L,Yi Y B,Li H S,Lu S L.High voltage power IC technology with nVDMOS RESURF pLDMOS,and novel level-shift circuit for PDP scan-driver IC[J].IEEE Transactions on Electron Devices,2006,53(4):891-896.
[4]
李晓明,庄奕琪.用于等离子驱动芯片的低成本VDMOS及其兼容BCD高压工艺[J].半导体学报,2007,28(11):1679-1684. Li X M,Zhuang Y Q.Cost-Effective VDMOS and compatible process for PDP scan-driver IC[J].Chinese Journal of Semiconductor,2007,28(11):1679-1684.(in Chinese)
[5]
Theolier L,Mahfoz-kotb K I,Morancho F,Assie-Souleille S,Mauran N.A new junction termination using a deep trench filled with BenzoCycloButene[J].IEEE Electron Device Letters,2009,30(6):687-689.
[6]
黄伟,许居衍,等.一种利用夹层Ta难熔金属提高NiSi薄膜热稳定性的新方法[J].电子学报,2011,39(11):2502-2506. Huang W,Xu J Y,et al.A thin tantalum interlayer on the thermal stability and electrical of NiSi film[J].Acta Electronica Sinica,2011,39(11):2502-2506.(in Chinese)
[7]
Sun W F,Yi Y B,Li H S,Shi L X.A novel latch-up protection for bulk-silicon scan driver ICs of shadow-mask plasma-display panel[J].IEEE Electron Device Letters,2007,28(12):1135-1137.