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含能材料  2013 

RDX单晶的生长诱导位错表征

Keywords: 有机化学,RDX大单晶,摇摆曲线,生长诱导位错

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Abstract:

采用溶剂蒸发法,以丙酮为溶剂,在一定结晶条件下可获得晶体质量好的厘米级RDX大单晶(约40mm×40mm×30mm)。用高分辨X射线三晶衍射(TAXRD)摇摆曲线(ω扫描)研究了RDX单晶的生长诱导位错,用SplitPearsonⅦ分析函数并对摇摆曲线进行了拟合,得到(210)、(200)和(111)晶面的摇摆曲线半高宽(FWHM),其值分别为35.35arcsec,45.31arcsec和77.92arcsec,说明(111)晶面的位错密度最大,线生长速度最快;(210)晶面的位错密度最小,线生长速度最慢,RDX单晶呈现出各向异性。

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