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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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n—HgCdTe表面积累层的定量迁移率谱研究
Keywords: 定量迁移率谱分析,表面积累层,HgCdTe
Abstract:
利用定量迁移率谱技术，通过对霍尔系数和电阻率与磁场强度的关系，获得了ｎ－ＨｇＣｄＴｅ光导器件表面积累层中子带电子的浓度和迁移率，结果与Ｓｈｕｂｎｉｋｏｖ－ｄｅＨａｓｓ实验和理论计算的结果非常吻合．
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