OALib Journal期刊
非掺杂p型MBE—Hg1—xCdxTe材料的受主性质
Keywords: 分子束外延碲镉汞非掺杂p型受主性质红外
Abstract:
对经２５０℃Ｐ型热处理获得的Ｈｇ１－ｘＣｄｘＴｅＭＢＥ材料进行变温霍耳测量和理论拟合计算，由此得到ＨｇＣｄＴｅ－ＭＢＥ材料的受主浓度为２－３×１０＾１６ｃｍ＾－３，残余施主浓度为５×１０＾１５ｃｍ＾－３左右，两才相比显示材料的补偿度较低，拟合得到的汞空位受主能级为１５－１８ｍｅＶdisplaystructure
References
[1] TANG D Y, Mi Z Y, et al. , Fundamentals of photoelectronic devices, Shanghai:Shanghai Scientific and Technological Literature Publishing House(汤定元,糜正瑜,等.光电器件概论,上海:上海科技文献出版社),Shanghai,China [2] Faurie J P,et al. Thin Solid Films,1982,90:107 [3] Teszner J L. SPIE, 1995,2552:730 [4] Norton P R. Optic. Engeneer, 1991,30:1649 [5] Dewames B E,et al. SPIE,1993,1735:2 [6] Kenworthy I,et al. Semicod. Sci. Technol. ,1990,5:854 [7] Boukerche M,et al. J. Vac. Sci. Technol. A, 1989,7(2) :311 [8] Sasaki T, et al.J. Cryst. Growth,1992,117:222 [9] WANG S L.et al.J.Infrared and Millimeter Waves(王善力,等.红外与毫米波学报),1996,15(5):333 [10] YANG J R,et al.J.Infrared and Millimeter Waves(杨建荣,等.红外与毫米波学报)1996,15(5):327 [11] Rao E V K, et al.J. Appl. Phys. ,1987,61:4808 [12] Boukerche M, et al.J. Vac. Sci. Technol. A,1986,4:2072 [13] Loue L F, Frye W H. J. Appl. Phys. 1987,61(2) :787 [14] Weiler M H. Semicond. Semimet. ,1981,16 [15] Hansen G L, et al.J. Appl. Phys. ,1982,53:7099 [16] Elliott C T, et al. J. Phys. Chem. Solids,1972,33:1527 [17] Scott W,et al.J. Appl. Phys,1976,47:1408 [18] Capper P, et al.J. Crystal Growth,1985,71:57 [19] Lacklison D E, Capper P. Semicond. Sci. Technol. A, 1987,2:136 [20] Gole M C,et al. J Vac. Sci. Technol. A1986,4:2040 [21] ShinSH, et al. J. Appl. phys. ,1980,51:3772 [22] Edwall D D,et al.J. Vac. Sci. Techol. B,1992,10:1423 [23] Higgins W M,et al. J. Vac. Sci. Technol. A,1989,7:271
Full-Text
Contact Us
service@oalib.com
QQ:3279437679
WhatsApp +8615387084133
