Li G H, Goni A R, Abraham C, et al. Photoluminescence from stra ined InAsmonolayers in GaAs under pressure, Phys.Rev.B,1994,50 : 1575
[2]
Ikonic Z.Srivastava G P. Electronic structure of [133]-grown (Ga As)m(AlAs)n superlattices,Phys.Rev.B,1994,49(15):10749
[3]
Chris G. Walle Van de Band lineups and deformation potentials in the model-soldtheory,Phys. Rev.B,1989,38: 10749
[4]
Glaser E R， Bennett B R,Shanabrook B V,et al. Photoluminescence studies of self-assembled InSb, GaSb and A1Sbquantum dot heterostructure,A ppl. Phys. Lett.,1996,68: 3614
[5]
Bennett B R, Magno R, Shanabrook B V. Photoluminescence studies of self-assembledInSb, GaSb, and A1Sb quantum dot heterostructures,Appl.Phys.Lett.,1996,68: 505
[6]
Fafard S, Leon R, Leon D,et al. Visible photoluminescence from N-dot ensembles andlinewidth of ultrasmall AlInAs/AlGaAs quantum dot, Phys. Rev.B,1994,50: 8086
[7]
Phillips J, Bhattacharya P, Venkateswaran. Pressure-induced energy level crossingsand narrouing of photoluminescence linewidth in self-assembled InAsAs/AlGaAs quantum dots,Appl. Phys. Lett.,1999,74: 1549
[8]
Fafard S, Leon R, Leonard D,et al. Phonons and radiative recombination inself-assembled quantum dots,Phys. Rev.B,1995,52 : 5752
[9]
Fu L P, Bacalzo F T, Gilliland G D, et al. Photoluminescence determination ofthermally activated fast X-Γ interlayer electron scattering in t ype-Ⅱ GaAs/AlAssuperlattice, Phys. Rev.B,1995,51: 17630
