MAO Xu, LI Hong-Ning, YANG Ming-Guang, et al. Effect of the Ar pressure on Ge/Si multilayer film by RF sputtering. Yunnan University Transaction (Science and Technology Edition) (毛旭,李宏宁,杨明光,等. 射频溅射中氩气压强对Ge/Si多层膜的影响. 云南大学学报(自然科学版)), 1999, 21(1): 23-26
[2]
Chen Liangyao, Feng Xinwe, Su Yi, et al. Improved rotating analyzer-polarizer type of scanning ellipsometer. Thin Solid Film, 1993, 234: 385-389
[3]
Aspros D E. Optical Properties of Solids: New Development. Serphin B O, ed. North-Holland: Amsterdam, 1976: 15
[4]
ZHOU Guo-Liang, WANG Xun. Molecular epitaxial growth of the super integral SiGe/Si superlattice. The Doctoral Dissertation of Fudan University (周国良, 王迅. 高完整SiGe/Si超晶格的分子外延生长. 复旦大学博士论文), 1991
[5]
YANG Yu, WANG Xun. The optical-induced emission of the MBE epitaxial SiGe/Si quantum well. The Doctoral Dissertation of Fudan University (杨宇, 王迅. 分子束外延SiGe/Si量子阱光致发光研究. 复旦大学博士论文), 1996
[6]
Chen L Y, Lynch D W. Scanning ellipsometer by rotating polarizer and analyzer. Appl. Opt., 1987, 26(24): 5221-5228
