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纳米碳管模板法制取的GaP纳米棒拉曼光谱研究

Keywords: 纳米碳管模板法GaP纳米棒拉曼光谱偏振特性半导体材料磷化镓

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Abstract:

报道了用纳米碳管模板法制备的GaP纳米棒的拉曼光谱特征,观测到声子限制效应引起的GaP纳米棒TO和LO模的红移,红移量一般在2-10cm^-1之间,与所测到的纳米棒的尺寸有关,在偏振特性研究中,发现GaP纳米棒的偏振特性不能用单根纳米棒的选择定则来解释,而与测量光斑内多根纳米棒的无序取向有关,无序程度越高,偏振特性的方向性越弱,当激发光功率增加时,GaP纳米棒的TO和LO模的频率显著减少,表明纳米棒中的激光加热效应比体材料中强很多,而且GaP纳米棒的拉曼散射强度随激发光功率的增加先饱和,然后减小,表明在强激发功率下GaP纳米棒中的缺陷会迅速增加。

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