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SOI二极管型非制冷红外焦平面结构的改进设计

Keywords: 绝缘衬底上的硅,二极管,填充系数,红外焦平面

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Abstract:

在绝缘衬底上的硅(SOI)制备的二极管型非制冷红外焦平面是利用单晶硅PN结二极管作为温度探测器,比其它类型非制冷红外焦平面具有自己的独特优势.描述了传统型像素的结构与特性,并提出一种改进型结构.在传统的像素结构中,红外吸收结构直接覆盖于二极管表面,其填充系数仅为21%.改进后的结构将红外吸收层悬空并覆盖整个像素表面,使吸收结构能够达到80%,大大提高了器件的吸收率.计算结果也显示改进后的结构在像素尺寸为35μm×35μm时,器件的灵敏度可达到7.75×10-3V/K,等效功率噪声(NETD)可减小至43mK(f/10.0).同时,ANSYS的仿真结果也表明改进后的结构在吸收率上的提高,证明了此结构的可行性.

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