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微纳BNT铁电薄膜阵列制备及性能研究

Keywords: 铁电薄膜,微纳薄膜阵列,硅微通道板,钕掺杂太酸铋

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Abstract:

采用溶胶-凝胶和旋涂抽滤方法,在硅微通道(Si-MCP)衬底的内壁上涂敷前驱物,然后分别在600℃,650℃,700℃和750℃条件下制备Bi3.15Nd0.85Ti3O12/Si-MCP微纳薄膜阵列,并对其结构及铁电特性进行表征.研究结果显示,退火温度越高,Si-MCP内被局域化的微纳薄膜结晶颗粒尺寸越大,同时BNT/Si-MCP微纳薄膜阵列越趋向沿c轴取向,尤其在750℃下制备的薄膜具有表面形貌均匀和c轴取向程度高等优点,且剩余极化强度可达93.8μC/cm2.

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