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在二氧化硅衬底上制备磁光Ce:YIG薄膜用于磁光波导型器件

Keywords: YIG石榴石YIG薄膜磁光性能磁性能二氧化硅衬底铈掺杂激光材料

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Abstract:

对Ce1YIG磁光薄膜的制备过程及磁光性能进行了详细的研究.用RF磁控溅射法在二氧化硅的基片.上淀积Ce1YIG薄膜,再对此薄膜进行晶化处理,以得到具有磁光性能的Ce1YIG薄膜.本文讨论了晶化过程中,Ce1YIG薄膜微观结构的变化对其磁光性能的影响.结果表明:采用波长为630nm的可见光测量,薄膜的饱和法拉第旋转系数θF为0.8deg/μm.同时,晶化薄膜易磁化方向为平行于膜面方向,其居里温度点为220℃.所得Ge1YIG薄膜的参数表明:所制备的薄膜适宜于制备波导型磁光隔离器.

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