WANG Guanquan, YANG Yuqing, ZHANG Huaming, et al. Design and Performance of Energy Conversion Units of Betavoltaic Isotopic Batteries[J]. Atom Energy Sci&Tech, 2010, 44（4）, 494-498(in Chinese).
[2]
BOWER K E, EARBANEL’ Y A, SHRETER Y G, et al. Polymers, phosphors, and voltaics for radioisotope microbatteries[M]. United States of America: CRC Press, 2002.
[3]
HONSBERG C, DOOLITTLE W A, ALLEN M, et al. GaN betavoltaic energy converters[C]//the 31st IEEE Photovoltaics Specialist Conference. Orlando Florida, USA: IEEE, 2005.
[4]
WARNER R M, GRUNG B L.半导体器件电子学[M]. 吕长志，等译. 北京：电子工业出版社，2005.
[5]
WARNER R M, GRUNG B L. Electronics of Semiconductor Devices[M]. LV Changzhi, et al. Trans. Beijing: Publishing House of Electronics Industry, 2005(in Chinese).
[6]
WACHARASINDHU T, KWON J W, MEIER D E, et al. Radioisotope microbattery based on liquid semiconductor[J]. Applied Physics Letters, 2009, 95(2009): 014103.
LUO Shunzhong, WANG Guanquan, ZHANG Huaming. Advance in radiation voltaic isotope battery[J]. Isotope, 2011, 24(1): 1-11(in Chinese).
[9]
WANG G Q, HU R, WEI H Y, et al. The temperature effect of the electrical performances of betavoltaic cell[J]. Applied Radiation and Isotopes, 2010, 68(12): 2214-2217.
[10]
KOSTESKI T, KHERANI N P, SHMAYDA W T, et al. Nuclear batteries using tritium and thin film hydrogenated amorphous silicon[J]. Fusion Science and Technology, 2005, 48(July/Aug): 700-703.
[11]
CORY D C, BRIAN J L, RYNE P R, et al. InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance[J]. Journal of Applied Physics, 2006, 100(2006): 114519.
[12]
CHANDRASHEKHAR M V S, CHRISTOPHER I T, LI H, et al. Demonstration of a 4H SiC betavoltaic cell[J]. Applied Physics Letters, 2006, 88(2006): 033506.
WANG Guanquan, YANG Yuqing, ZHANG Huaming, et al. Electrical properties of PN junction devices under tritium irradiation[J]. Nucl Tech, 2009, 32（8）: 584-587(in Chinese).
[15]
JAMES B, DOUGLASS H, AMIT L. A nuclear microbattery for MEMS (final): Final scientific/technical report, DE-FG07-99ID13781[R]. US: US Department of Energy Award, 2003.
[16]
SUN W, KHERANI N P, HIRSCHMAN K D, et al. A three-dimensional porous silicon p-n diode for betavoltaics and photovoltaics[J]. Advanced Materials, 2005, 17(2005): 1230-1233.
[17]
CLARKSON J P, SUN W, HIRSCHMAN K D, et al. Betavoltaic and photovoltaic energy conversion in three-dimensional macroporous silicon diodes[J]. Phys Stat Sol A, 2007, 204(5): 1 536-1 540.
Chen, Z. M., Wang, J.N. Basic Material Physics For Semiconductor Devices [M]. Science publishing company, China. 1999.
[21]
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J.-L. Cantin, and S. Raymond. Radiation Hardness of Gallium Nitride. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49(6), 2733-2738
