ROMMEL S L,JANG J H,LU W,et al.Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication[J].Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2002,20(4):1327-1330.
[2]
BERG E W,PANG S W.Electrical and optical characteristics of etch induced damage in InGaAs[J].Journal of Vacuum Science and Technology B,1999,17(6):2745-2749.
[3]
BOUCHOULE S,PATRIARCHE G,GUILET S,et al.Sidewall passivation assisted by a silicon coverplate during Cl2-H2 and HBr inductively coupled plasma etching of InP for photonic devices[J].Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2008,26(2):666-674.
[4]
LEE K H,GUIKET S,SAGNES I,et al.Reduced features two-dimensional photonic crystals on InP-based materials etched using Cl/sub2/Ar inductively coupled plasma[J].IPRM,2007,1(1):222-225.
[5]
NAMAM P S,FERRERIA L M,LEE T Y.Study of grass formation in GaAs backside via etching using inductively coupled plasma system[J].Journal of Vacuum Science and Technology B,2000,18(6):2780-2784.
[6]
LEE J W,DEVRE M W,REELFS B H,et al.Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas[J].Journal of Vacuum Science and Technology A,2000,18(4):1220-1224.
[7]
LEE J W,JUNG P G,DEVRE M,et al.Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers[J].Solid-State Electronics,2002,46(5):685-688.
[8]
CHOQUETTE K D,SHUL R J,HOWARD A J,et al.Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment[J].Journal of Vacuum and Science and Technology B,1995,13(1):40-42.
