CANHAM L T.Silicon quantum wire array fabrication by electro-chemical and chemical dissolution of wafers EJ3.Appl Phys Lett,1990,57:1046-1048.
[2]
SHIBA K,NAKAGAWA K,IKEDA M,et al.Optical absorption and photoluminescence of self-assembled silicon quantum dots[J].J Appl Phys,1997,36:1279-1282.
[3]
YU W,WANG B Z,LU W B et al.Growth of nanocrystalline Silicon films by Helicon wave plasma Chemical vapour deposition[J].Chin Phys Lett,2004,21:1320-1322.
[4]
RATTO F,LOCATELLI A.FONTANA S,et al.Diffusion dnamics during the nucleation and growth of Si nanostructures on Si(111)[J].Phys Rev Lett,2006,96:1031-1034.
[5]
AMORUSO S,AUSANIO G.BARONE A C,et al.Nanopaticales size modifition during femtosecond laser ablation of nickel in vacuum[J].Appl Surf Sci,2007,254:1012-1016.
[6]
WANG Y L.XU W,ZHOU Y,et al.Inflution of pulse repetition rate on the average size of silicon nanoparticles deposited by laser ablation[J].Laser Part Beams,2007,25:9-13.
[7]
MURAMOTO J,INMARU T,NAKATA Y,et al.Influence of ambient gas on formation process of Si nanoparticles by laser ablation[J].Appl Phys A,1999,69:S239-S241.
[8]
FU G S,WANG Y L,CHU L Z,et al.The size distribution of Si nanoparticles prepared by pulsed-laser ablation in pure He,Ar or Ne gas[J].Eurnphys Lett,2005,69:758-762.
