WU D, JIANG Y, ZANG Y G, et al. Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons[J]. J Mater Chem, 2012, 22(13): 6206-6212.
[2]
BARATI A, KLEIN A, JAEGERMANN W, et al. Deposition and characterization of highly p-type antimony doped ZnTe thin films[J]. Thin Solid Films, 2009, 517(7): 2149-2152.
[3]
MAHALINGAM T, JOHN V S, RAJENDRAN S, et al. Annealing studies of electrodeposited zinc telluride thin films[J]. Surface and Coatings Technology, 2002, 155(2-3): 245-249.
[4]
蔡道林, 郑家贵, 冯良桓, 等. ZnTe薄膜特性研究[J]. 材料科学与工艺, 2004, 12(5):479-482. CAI D L, ZHENG J G, FENG L H, et al. Study the characteristics of ZnTe films[J]. Materials Science and Technology, 2004, 12(5):479-482.
[5]
RAO G K, BANGERA K V, SHIVAKUMAR G K. Studies on the photoconductivity of vacuum deposited ZnTe thin films[J]. Materials Research Bulletin, 2010, 45 (10): 1357-1360.
[6]
刘恩科, 朱秉升, 罗晋生, 等. 半导体物理学[M]. 4版.北京:国防工业出版社, 2010.106-108, 256-258. LIU E K, ZHU B S, LUO J S, et al. Semiconductor Physics[M].Forth ed. Beijing:National Defense Industry Press, 2010.106-108, 256-258.
[7]
ACHARYA K P, ERLACHER A, ULLRICH B, et al. Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser lines[J]. Thin Solid Films, 2007, 515(7-8): 4066-4069.
[8]
DAVAMI K, KANG D, LEE J S, et al. Synthesis of ZnTe nanostructures by vapor-liquid-solid technique[J]. Chem Phys Lett, 2011, 507(1-3): 208.
[9]
GUO Q, KUME Y, FUKUHARA Y, et al. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy[J]. Solid State Commun, 2007, 141(4): 188-191.
[10]
SPATH B, FRITSCHE J, SAUBERLICH F, et al. Studies of sputtered ZnTe films as interlayer for the CdTe thin film solar cell[J]. Thin Solid Films, 2005, 480: 204-207.
[11]
FENG L H, WU L L, LEI Z, et al.Studies of key technologies for large area CdTe thin film solar cells[J]. Thin Solid Films, 2007, 515(15): 5792-5797.
[12]
MEYERS P V. Polycrystalline Cadmium Telluride n-i-p Solar Cell[R]. SERL Subcontract Report ZL-7-06031-2, Final Report, Solar Energy Research Institute, 1990.
[13]
AQILI A K S, SALEH A J, ALI Z, et al. Ag doped ZnTe films prepared by closed space sublimation and an ion exchange Process[J]. Journal of Alloys and Compounds, 2012, 520: 83-88.
[14]
LI S Y, JIANG Y, WU D, et al. Enhanced p-type conductivity of ZnTe nanoribbons by nitrogen doping[J]. J Phys Chem C, 2010, 114(17), 7980-7985.
[15]
HUO H B, DAI L, LIU C, et al. Electrical properties of Cu doped p-ZnTe nanowires[J]. Nanotechnology, 2006, 17(24): 5912-5915.
[16]
TANAKA T, HAYASHIDA K, NISHIO M, et al. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy[J]. J Appl Phys, 2003, 93(9): 5302-5306.
[17]
TANAKA T, HAYASHIDA K, NISHIO M, et al. Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy[J]. J Appl Phys, 2003, 94(3): 1527-1530.
[18]
LUO M, VANMIL B L, TOMPKINS R P, et al. Photoluminescence of ZnTe and ZnTe:Cr grown by molecular-beam epitaxy[J]. J Appl Phys, 2005, 97(1): 013518.
[19]
李蓉萍, 李琦. 掺Sb-CdTe薄膜的结构及其光学特性研究[J]. 真空科学与技术, 2002, 22(6): 474-476. LI R P, LI Q. Properties of Sb-doped CdTe thin films[J]. Chinese Journal of Vacuum Science and Technology, 2002, 22(6): 474-476.